STM32G070系列芯片擦除、写入Flash错误解决

    在用G070KBT6芯片调用HAL_FLASHEx_Erase(&EraseInitStruct, &PageError)时，调试发现该函数返回HAL_ERROR，最后定位到FLASH_WaitForLastOperation(FLASH_TIMEOUT_VALUE)函数出现错误，pFlash.ErrorCode为0xA0，即FLASH错误标志位 FLASH_SR_PGSERR和FLASH_SR_PGAERR被置位；

static void Flash_EraseSector(uint32_t PageAddress) {FLASH_EraseInitTypeDef EraseInitStruct;uint32_t PageError = 0;/* Fill EraseInit structure */EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;EraseInitStruct.Page = (PageAddress - FLASH_BASE) / FLASH_PAGE_SIZE;EraseInitStruct.NbPages = 1;EraseInitStruct.Banks = FLASH_BANK_1;//FLASH->SR = FLASH_SR_CLEAR;if(HAL_FLASHEx_Erase(&EraseInitStruct, &PageError) != HAL_OK) {/* Error occurred while page erase */Flash_Error_Handler();}
}

在网上找半天找不到问题原因，最后在【问题】STM32G0芯片擦除flash失败，发现死在FLASH_SR_CFGBSY一直为1（已解决）_读出的选项字节:芯片做全片擦除失败-CSDN博客

    博客和评论区中发现是由于我程序中调用了看门狗喂狗函数，但是为了调试就把看门狗初始化函数注释调了，导致出现FLASH标志位错误，我把喂狗函数也一起注释掉再调试就发现能够正常对FLASH进行擦除。

然后就是对FLASH进行写和读，当我以32位数据为单位对FLASH进行读写时会进入HardFAULT_Handle，后面在这篇博客中发现要改为以64位数据为单位读写才可以；STM32G030F6P6读写flash失败问题（HAL）-CSDN博客

  至此，就能对FLASH进行正常擦除和读写，可以用这个将单片机板载FLASH中的一部份区域用作用户数据掉电保存，功能实现和测试代码如下（包括64字节读写和FLASH结构体读写）：

User_Flash.c:#include "User_Flash.h"
#include <string.h>
#include "usart.h"static void Flash_Error_Handler(void) {while (1) {// Error handling}
}/*
* @function: flash页擦除函数,擦除指定地址所处的页（扇区）
* @parm1:  uint32_t PageAddress  要擦除的页中的任意地址
*/
static void Flash_EraseSector(uint32_t PageAddress) {FLASH_EraseInitTypeDef EraseInitStruct;uint32_t PageError = 0;/* Fill EraseInit structure */EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;EraseInitStruct.Page = (PageAddress - FLASH_BASE) / FLASH_PAGE_SIZE;EraseInitStruct.NbPages = 1;EraseInitStruct.Banks = FLASH_BANK_1;//FLASH->SR = FLASH_SR_CLEAR;if(HAL_FLASHEx_Erase(&EraseInitStruct, &PageError) != HAL_OK) {/* Error occurred while page erase */Flash_Error_Handler();}
}/*
* @function: 在指定地址写入32位数据先解锁flash，再擦除指定地址对应页，写入数据，最后重新上锁Flash
* @parm1:  uint32_t Address  要写入的数据起始地址
* @parm2:  uint32_t Data     要写入的数据
*/
void Flash_WriteData(uint32_t Address, uint64_t  Data) {HAL_FLASH_Unlock();  //先解锁FLASHFlash_EraseSector(Address);                    //擦除要写入的扇区（页）if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, Address, Data) == HAL_OK) {/* Check the written value */if (*(uint64_t*)Address != Data) {/* Error occurred while writing data */Flash_Error_Handler();}} else {/* Error occurred while writing data */Flash_Error_Handler();}HAL_FLASH_Lock();   //重新上锁FLASH
}/*  
*   @function: 读取Flash指定地址的32位数据
*   @parm1:  uint32_t Address  要读取的地址
*
*   @return： 读取的32位数据
*/
uint64_t Flash_ReadData(uint32_t Address) {return *(uint64_t*)Address;
}/*
* @function: 在指定地址写入结构体数据先解锁flash，再擦除指定地址对应页，写入数据，最后重新上锁Flash
* @parm1:  uint32_t Address  要写入的数据起始地址
* @parm2:  MyData_t *data     要写入的结构体数据的指针
*/
void Flash_WriteStruct(uint32_t Address, MyData_t *data) {HAL_FLASH_Unlock();  //先解锁FLASHFlash_EraseSector(Address);                    //擦除要写入的扇区（页）uint64_t *dataPtr = (uint64_t*)data;size_t size = sizeof(MyData_t) / 8; // Number of 64-bit wordsif (sizeof(MyData_t) % 8 != 0) size++; // handle cases where size is not multiple of 4// Write the datafor (size_t i = 0; i < size; i++) {if(HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, Address + (i * 8), dataPtr[i]) == HAL_OK){if (*(uint64_t*)(Address + (i * 8)) != dataPtr[i]) {Flash_Error_Handler();}} else {Flash_Error_Handler();}}HAL_FLASH_Lock();   //重新上锁FLASH
}/*  
*   @function: 读取Flash指定地址的结构体数据
*   @parm1:    uint32_t Address  要读取的地址
*   @parm2:    MyData_t *data  读取的结构体数据保存地址
*/
void Flash_ReadStruct(uint32_t Address, MyData_t *data) {uint64_t *pData = (uint64_t*)data;uint32_t size = sizeof(MyData_t) / 8;  // assuming size is a multiple of 4if (sizeof(MyData_t) % 8 != 0) size++; // handle cases where size is not multiple of 4for (uint32_t i = 0; i < size; i++) {pData[i] = *(uint64_t*)(Address + (i * 8));}
}/******测试代码******/
uint64_t data;
void Flash_Test(void)
{//EraseFlash(63,1);Flash_WriteData(FLASH_USER_START_ADDR, DATA_64);data = Flash_ReadData(FLASH_USER_START_ADDR);if (data == DATA_64) {myprintf("Flash_WriteData OK");} else {myprintf("Flash_WriteData ERROR");// Data write error}MyData_t myData = {0x12345678, 0xABCD, 0xEF, "Hello"};MyData_t readData;/* Program the user Flash area */Flash_WriteStruct(FLASH_USER_START_ADDR, &myData);/* Verify the data */Flash_ReadStruct(FLASH_USER_START_ADDR, &readData);// 验证数据if (memcmp(&myData, &readData, sizeof(MyData_t)) == 0) {myprintf("Flash_WriteStruct OK");// Data written and read correctly} else {myprintf("Flash_WriteStruct ERROR");// Data write or read error}
}User_Flash.h:
#ifndef __USER_FLASH_H__
#define __USER_FLASH_H__#include "stm32g0xx_hal.h"#define FLASH_USER_START_ADDR   0x0801F800  /* G070KBT6 flash大小为128KB，每页2KB，这里用最后一页作为用户数据保存区域 */
#define FLASH_USER_END_ADDR    (0x08020000 - 1)   /* End address of Flash */
//#define FLASH_PAGE_SIZE         2048   /* Page size of 2 KB */
#define DATA_32                 ((uint32_t)0x12345678)
#define DATA_64                ((uint64_t)0x12345678)typedef struct {uint32_t field1;uint16_t field2;uint8_t field3;char field4[10];
} MyData_t;static void Flash_Error_Handler(void) ;
static void Flash_EraseSector(uint32_t PageAddress) ;
void Flash_WriteData(uint32_t Address, uint64_t  Data);
uint64_t Flash_ReadData(uint32_t Address);
void Flash_WriteStruct(uint32_t Address, MyData_t *data) ;
void Flash_ReadStruct(uint32_t Address, MyData_t *data) ;
void Flash_Test(void);#endif

参考文章：STM32G030F6P6读写flash失败问题（HAL）-CSDN博客

【问题】STM32G0芯片擦除flash失败，发现死在FLASH_SR_CFGBSY一直为1（已解决）_读出的选项字节:芯片做全片擦除失败-CSDN博客